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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV67/67A/67B/67C/67D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL PARAMETER BDV67 BDV67A VCBO Collector-base voltage INCH VCEO ANG BDV67B BDV67C BDV67D BDV67 BDV67A SEM E Open emitter DUC ICON CONDITIONS VALUE 80 TOR UNIT 100 120 140 160 60 80 V Collector-emitter voltage BDV67B BDV67C BDV67D Open base 100 120 150 V VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature Open collector 5 16 20 0.5 V A A A W ae ae TC=25ae 200 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BDV67 BDV67A V(BR)CEO Collector-emitter breakdown voltage BDV67B BDV67C BDV67D VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 CC VF ton toff Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain IC=10A ,IB=40mA IC=10A ; VCE=3V IC=30mA, IB=0 BDV67/67A/67B/67C/67D SYMBOL CONDITIONS MIN 60 80 100 120 150 TYP. MAX UNIT V 2.0 2.5 1.0 4.0 1 V V mA mA mA VCB=VCBOmax, IE=0 VCB=1/2VCBOmax; Tj=150ae VCE=1/2VCEOmax, IB=0 VEB=5V; IC=0 IC=1A ; VCE=3V Collector capacitance Diode forward voltage Turn-on time Turn-off time HAN INC SEM GE IE=10A IC=10A ; VCE=3V IC=16A ; VCE=3V OND IC 1000 TOR UC 5 3000 1000 300 3.0 1.0 3.5 |I |I IE=0 ; VCB=10V;f=1MHz pF V s s IC = 10 A, IB1 =-IB2=40 mA VCC = 12V THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base MAX 0.625 UNIT K/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDV67/67A/67B/67C/67D SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.1mm) 3 |
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